document number: 89432 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions 5kasmc10a thru 5kasmc43a vishay general semiconductor new product typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automotive requirement ? available in uni-directional polarity only ? 5000 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammabi lity rating base p/nhm3 - halogen-free, rohs compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end note (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 primary characteristics v wm 10 v to 43 v p ppm (10 x 1000 s) 5000 w p d at t m = 50 c 6.5 w t j max. 185 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissip ation with a 10/1000 s waveform (fig. 3) p ppm (1) 5000 w peak power pulse current with a 10/1000 s waveform (fig. 1) i ppm (1) see next table a power dissipation on infinite heatsink, t m = 50 c p d 6.5 w operating junction and storage temperature range t j , t stg - 65 to + 185 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89432 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 5kasmc10a thru 5kasmc43a vishay general semiconductor new product notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derated per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 notes (1) mounted on minimum recommended pad layout (2) mounted on infinite heat sink note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) maximum reverse leakage at v wm t j = 150 c i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. 5kasmc10a 5ax 11.1 12.3 1.0 10 20.0 500 294.1 17.0 5KASMC12A 5be 13.3 14.7 1.0 12 10.0 300 251.3 19.9 5kasmc13a 5bg 14.4 15.9 1.0 13 10.0 300 232.6 21.5 5kasmc16a 5bp 17.8 19.7 1.0 16 2.0 50 192.3 26.0 5kasmc17a 5br 18.9 20.9 1.0 17 2.0 50 181.2 27.6 5kasmc18a 5bt 20.0 22.1 1.0 18 2.0 50 171.2 29.2 5kasmc20a 5bv 22.2 24.5 1.0 20 2.0 50 154.3 32.4 5kasmc22a 5bx 24.4 26.9 1.0 22 2.0 50 140.8 35.5 5kasmc24a 5bz 26.7 29.5 1.0 24 2.0 50 128.5 38.9 5kasmc26a 5ce 28.9 31.9 1.0 26 2.0 50 118.8 42.1 5kasmc28a 5cg 31.1 34.4 1.0 28 2.0 50 110.1 45.4 5kasmc30a 5ck 33.3 36.8 1.0 30 2.0 50 103.3 48.4 5kasmc33a 5cm 36.7 40.6 1.0 33 2.0 50 93.8 53.3 5kasmc36a 5cp 40.0 44.2 1.0 36 2.0 50 86.1 58.1 5kasmc40a 5cr 44.4 49.1 1.0 40 2.0 50 77.5 64.5 5kasmc43a 5ct 47.8 52.8 1.0 43 2.0 50 72.0 69.4 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient r ? ja (1) 100 c/w typical thermal resistance, junction to mount r ? jm (2) 20.8 c/w ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quan tity delivery mode 5kasmc10ahm3/57 (1) 0.257 57 850 7" diameter plastic tape and reel 5kasmc10ahm3/9a (1) 0.257 9a 3500 13" diameter plastic tape and reel
document number: 89432 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 5kasmc10a thru 5kasmc43a vishay general semiconductor new product ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical j unction capacitance fig. 5 - maximum non-repetitive/peak forward surge current fig. 6 - power derating curve 1 10 100 1101001000 p ppm - peak pulse power (kw) t d - pulse width (s) 0 25 50 75 100 0 50 100 150 200 t j - initial temperature (c) peak pulse power (p pp ) or current (i pp ) derating in percentage (%) 0 50 100 150 t r = 10 s t r = 8 s peak value i ppm half value - i ppm i pp 2 t d 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak pulse current (% i rsm ) t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm t d = 1000 s t d = 20 s 100 10 000 1 000 000 10 20 30 40 50 c j - junction capacitance (pf) reverse voltage (v) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p measured at zero bias measured at stand-off voltage v wm 1000 100 000 6.5 temperature (c) p d - power dissipation (w) 0 150 100 0 200 50 175 125 75 25 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 t a, mounted on minimum recommended pad layout t m , mounted on innite heat s ink transient thermal impedance (c/w) t p - pulse duration (s) 100 10 1 0.01 0.1 1 10 100 1000
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89432 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 5kasmc10a thru 5kasmc43a vishay general semiconductor new product package outline dimensions in inches (millimeters) cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pa d layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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